A2: Correlative Raman Spectroscopy and TEM Imaging of Defects in 2D Semiconductors
Correlative Raman Spectroscopy and TEM Imaging of Defects in 2D Semiconductors
This doctoral project aims to elucidate structure–property relationships of defects in 2D semiconductors and functional thin films through correlative optical spectroscopy and electron microscopy. The candidate will combine Raman and photoluminescence (PL) spectroscopy with advanced TEM and 4D-STEM methods to investigate radiation- and beam-induced defects in van der Waals layer stacks and thin films. A key goal is to establish workflows for identical-location measurements using fiducial marker systems and optimized sample transfer procedures. Hyperspectral Raman and PL maps will be correlated with atomic-scale structural and chemical information from EM data to reveal the effects of defects, strain, and interfaces on optoelectronic properties. The project further integrates machine-learning-based data fusion to automate the correlation and interpretation of optical and microscopic datasets. The resulting methodology will serve as a foundation for high-throughput, correlative defect analysis across the CorMic research network.
